Format:
Online-Ressource
,
Ill., graph. Darst.
Edition:
Online-Ausg. 2005 Springer eBook Collection. Chemistry and Materials Science Electronic reproduction; Available via World Wide Web
ISBN:
9783540319153
Series Statement:
Springer proceedings in physics 107
Content:
The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.
Content:
Organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. This series focuses on the advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy
Note:
Includes bibliographical references and indexes
,
Structural properties of GaN quantum dots; Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes; Investigation of InxGa1-xN islands with electron microscopy; First stage of nucleation of GaN on (0001) sapphire; In GaN-GaN quantum wells: their luminescent and nano-structural properties; Evolution of InGaN/GaN nanostructures and wetting layers during annealing; Origins and reduction of threading dislocations in GaN epitaxial layers; Oxygen segregation to nanopipes in gallium nitride; Strain relaxation in (Al,Ga)N/GaN heterostructures
,
A TEM Study of A1N Interlayer Defects in AlGaN/GaN HeterostructuresReduction of threading dislocation density using in-situ SiNx interlayers; The nucleation structure for cracks in AlGaN epitaxial layers; Microstructural and optical characterisation of InN layers grown by MOCVD; Structural properties of InN thin films grown with variable growth conditions on GaN/Al2O3 by plasma-assisted MBE; Growth and surface characterization of piezoelectric AlN thin films on silicon (100) and (110) substrates
,
Characterization and structuring of nitride-based heterostructures for vertical-cavity surface-emitting lasersCharacterization of defects in ZnS and GaN; Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated on SIMOX substrates; TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB; Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent annealing: Helium precipitates acting as dislocation sources; TEM investigation of Si/Ge multilayer structure incorporated into MBE grown Si whiskers
,
Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopyA study of processed and unprocessed dual channel Si/SiGe MOSFET device structures using FIB and TEM; Novel TEM method for large-area analysis of misfit dislocation networks in semiconductor heterostructures; Beta to alpha transition and defects on SiC on Si grown by CVD; Strain relaxation and void reduction in SiC on Si by Ge predeposition; Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops
,
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxyTEM determination of the local concentrations of substitutional and interstitial Mn and antisite defects in ferromagnetic GaMnAs; First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs; Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux; Magic matching in semiconductor heterojunctions; Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure
,
Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography
,
Electronic reproduction; Available via World Wide Web
Additional Edition:
ISBN 9783540319146
Additional Edition:
Erscheint auch als Druck-Ausgabe Microscopy of semiconducting materials Berlin [u.a.] : Springer, 2005 ISBN 354031914X
Additional Edition:
ISBN 9783540319146
Language:
English
Keywords:
Halbleiter
;
Mikroskopie
;
Konferenzschrift
DOI:
10.1007/3-540-31915-8
URL:
Volltext
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