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An analytical model for the threshold voltage shift caused by two-dimensional quantum confinement in undoped multiple-gate MOSFETs (2007)

Granzner, Ralf ; Schwierz, Frank ; Polyakov, Vladimir M.

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UID:

gbv_545805899

ISSN: 0018-9383

In: Institute of Electrical and Electronics Engineers, IEEE transactions on electron devices, New York, NY : IEEE, 1963, 54(2007), 9, Seite 2562-2565, 0018-9383

In: volume:54

In: year:2007

In: number:9

In: pages:2562-2565

Language: English

Author information: Schwierz, Frank

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Kooperativer Bibliotheksverbund

Berlin Brandenburg