UID:
almafu_9959242582602883
Umfang:
1 online resource (269 p.)
Ausgabe:
1st ed.
ISBN:
3-03813-671-9
Serie:
Materials Science Forum, Volume 711
Inhalt:
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, i
Anmerkung:
Description based upon print version of record.
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HeteroSiC & WASMPE 2011; Preface, Sponsors and Committees; Table of Contents; Chapter 1: SiC Heteroepitaxial Growth; Progress in 3C-SiC Growth and Novel Applications; Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate; CVD Growth of 3C-SiC on 4H-SiC Substrate; The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers; Structural Characterization of Heteroepitaxial 3C-SiC; Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
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Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerChapter 2: Microsystems and Microstructures Based on SiC; Study of 3C-SiC Mechanical Resonators, Filters and Mixers; Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application; Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling; Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
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Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 PlasmaMaterial Limitations for the Development of High Performance SiC NWFETs; Selective β-SiC/SiO2 Core-Shell NW Growth on Patterned Silicon Substrate; High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection; Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers; Chapter 3: Devices on SiC; High Quality 3C-SiC Substrate for MOSFET Fabrication; Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures
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Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETsThe Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors; Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour; Visible and Deep Ultraviolet Study of SiC/SiO2 Interface; High Temperature Capability of High Voltage 4H-SiC JBS; Parallel and Serial Association of SiC Light Triggered Thyristors
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Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETsChapter 4: Characterization: Devices and Material; Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001); Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy; Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si; On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
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Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
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English
Weitere Ausg.:
ISBN 3-03785-332-8
Sprache:
Englisch
