Kooperativer Bibliotheksverbund

UID:

Umfang: 1 online resource (594 p.)

Ausgabe: Reprint 2021

ISBN: 9783112575666

Serie: Physical Research ; 13

Anmerkung: Frontmatter -- , CONTENTS -- , INVITED PAPERS -- , EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- , SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- , SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- , ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- , ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- , NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- , CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- , PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- , BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- , PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- , RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- , THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- , ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- , THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- , STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- , IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- , SUBMITTED PAPERS -- , 1. IMPLANTATION INTO SILICON -- , STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- , STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- , GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- , IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- , RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- , ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- , In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- , DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- , INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- , LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- , ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- , CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- , APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- , PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- , SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- , EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- , 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- , RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- , PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- , MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- , AMORPHIZATION OF CD-IMPLANTED GAAS -- , Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- , APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- , GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- , INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- , MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- , DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- , CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- , 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- , INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- , LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- , HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- , 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- , INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- , ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- , INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- , ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- , ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- , RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- , DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- , 4. SILICIDES -- , INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- , PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- , LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- , FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- , MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- , QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- , REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- , 5. IMPLANTATION INTO METALS -- , SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- , CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- , STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- , IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- , TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- , IMPLANTATION INDUCED TEXTURE -- , SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- , PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- , RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- , WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- , STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- , STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- , EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- , AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- , 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- , THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- , SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- , THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- , STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- , MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- , EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- , ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- , LASER BEAM MODIFICATION OF OPTICAL FILMS -- , MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- , STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- , EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- , CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- , 7. MATERIALS DEPOSITION -- , RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- , ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- , SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- , ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- , LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- , METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- , CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- , MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- , FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- , 8. , SILICON ON INSULATORS -- , HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- , A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- , TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON—INSULATOR FORMATION BY MILLISECOND HEATING -- , SOI STRUCTURES FORMATION BY PULSED HEATING -- , FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- , THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- , SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- , OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- , STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- , THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- , 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- , HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- , HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- , FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- , IN SITU XPS AND LEED STUDY OF Si/SiC〉2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- , HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- , LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- , DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- , QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- , PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- , A LITHIUM LIQUID METAL ION SOURCE -- , PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- , ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- , PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- , PLASMATRON ION SOURCE FOR ION IMPLANTATION -- , CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- , CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- , LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- , INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- , HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- , AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- , 10. HIGH TEMPERATURE SUPERCONDUCTORS -- , LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- , EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- , ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- , PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- , FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- , PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- , FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- , SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- , 11. FUNDAMENTALS -- , COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- , DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- , ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- , A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- , PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- , COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- , THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- , TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- , THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- , RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- , IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- , AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- , ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- , THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- , MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- , NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- , ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- , DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- , PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- , THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- , NUCLEATION A? VARYING TEMPERATURES -- , MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- , ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- , NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- , A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- , MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- , LATE PAPER -- , A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- , Author -- , Physical Research , In German.

Weitere Ausg.: ISBN 9783112575659

Sprache: Deutsch

DOI: 10.1515/9783112575666

URL: https://doi.org/10.1515/9783112575666

URL: https://www.degruyter.com/isbn/9783112575666