UID:
almafu_9960073247002883
Format:
1 online resource (268 p.)
ISBN:
1-281-05434-8
,
9786611054342
,
0-08-054293-X
Series Statement:
Thin films ; v. 27
Content:
This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips.For the fi
Note:
Description based upon print version of record.
,
Cover; Contents; Contributors; Preface; Chapter 1. The Role of Ionized Physical Vapor Deposition in Integrated Circuit Fabrication; I. Overview of Ionized Physical Vapor Deposition; II. Trends in IC Fabrication; III. Overview; Chapter 2. High-Density Plasma Sources; I. Introduction; II. DC Magnetron Discharges for Sputtering of Conducting Materials; III. Inductively Coupled Plasmas; IV. Electron Cyclotron Resonance Plasmas; V. Hollow Cathode Magnetron Discharges; VI. Comparison of High-Density Plasma Sources; Chapter 3. Ionization by Radio Frequency Inductively Coupled Plasma; I. Introduction
,
II. ExperimentalIII. I-PVD Operation; IV. I-PVD Semiconductor Applications; V. Conclusions and Future Directions; Chapter 4. Ionization by Microwave Electron Cyclotron Resonance Plasma; I. Introduction; II. Techniques in Generating ECR I-PVD Plasmas; III. Experiments with Evaporated Copper; IV. Experiments with Sputtered Materials; V. Study of a Highly Ionized ECR I-PVD Reactor; VI. Conclusions; Chapter 5. Ionized Hollow Cathode Magnetron Sputtering; I. Introduction; II. Principles of Operation; III. Source Characterization; IV. Process Results; V. Other Applications; VI. Conclusions
,
Chapter 6. Applications and Properties of Ionized Physical Vapor Deposition FilmsI. Introduction; II. Metallization for Integrated Circuits; III. Characteristics of Film Deposition Using an I-PVD Source; IV. Applications; V. Conclusions; Chapter 7. Plasma Physics; I. Introduction; II. Ionization Mechanisms; III. Angular Distribution of Ions; IV. Metal Density Distributions; V. Summary; Chapter 8. Numerical Modeling; I. Introduction; II. Model Description; III. Simulation Results for Aluminum Film Deposition; Index
,
English
Additional Edition:
ISBN 0-12-533027-8
Language:
English
