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Anmerkung: Front Cover -- Advances in Semiconductor Nanostructures -- Copyright Page -- Contents -- List of Contributors -- Preface -- I. Low-Dimensional Systems: Theory and Experiment -- 1 The Theory of Two-Dimensional Electronic Systems -- 1.1 Electron States and Conductivity in a Quantum Well With a Nonideal Boundary -- 1.2 Charged Impurities in a Quantum Well -- 1.3 Two-Dimensional Systems in a Strong Magnetic Field -- 1.4 Photogalvanic Effect and Quantum Pumps -- 1.5 Theory of a Nonadiabatic Quantum Pump -- 1.6 Electron States in Graphene -- 1.7 Excitons in Graphene -- 1.8 Electrons in Curved Low-Dimensional Systems -- 1.9 Collective Effects in Low-Dimensional Systems (Plasma Waves, Wigner Crystallization, Screening) -- 1.9.1 Electrons in Inversion Layers -- 1.9.2 Plasma Oscillations of Multicomponent Two-Dimensional Systems -- 1.9.2.1 Single-Component Plasma in a Finite-Thickness Layer -- 1.9.2.2 Two Spatially Separated Layers of the Two-Dimensional Plasma -- 1.9.2.3 Three Identical Equidistant Layers of the Two-Dimensional Plasma -- 1.9.2.4 Intersubband Plasmons in the Quantum Well -- 1.9.3 Electron Crystal -- 1.10 Screening in Nanostructures -- 1.11 Quasi-One-Dimensional Systems -- 1.12 Double Quantum Well -- 1.13 Multilayer Superlattice -- 1.14 Screening by Dipole Excitons -- References -- 2 Two-Dimensional Semimetal in HgTe-Based Quantum Wells -- 2.1 Introduction -- 2.2 Quantum Wells Based on HgTe Technology and Structure -- 2.3 Samples and Experimental Technique -- 2.4 The Semimetal State in Wide HgTe Quantum Wells With an Inverted Band Structure: Their Discovery and Nature -- 2.5 Scattering Processes in a Two-Dimensional Semimetal -- 2.6 Quantum Hall Effect -- 2.6.1 Cyclotron Resonance in a Two-Dimensional Semimetal -- References -- 3 Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors -- 3.1 Introduction. , 3.2 Nonlinear Properties of 2D Electron Corbino Disks -- 3.2.1 Nonlinear conductance in "narrow" Corbino disks -- References -- 4 Silicon-Based Nanoheterostructures With Quantum Dots -- 4.1 Introduction -- 4.2 Homogeneity and Density of the Arrays of QDs -- 4.2.1 Effects of Low-Energy Ion Beam Action During Epitaxy -- 4.2.2 Laser Annealing of Nanostructures -- 4.2.3 Spatially Ordered Groups of QDs -- 4.3 Electronic Structure of Ge/Si QDs -- 4.3.1 Hole States -- 4.3.2 Electron States -- 4.3.3 Exciton States in Coupled QDs -- 4.4 Hole Transport in Dense Arrays of QDs -- 4.5 Spin Phenomena in an Array of Ge/Si QDs -- 4.5.1 Spin Relaxation in Single QD -- 4.5.2 Spin Relaxation During Resonance Tunneling Between QDs -- 4.5.3 Spin Relaxation in Two-Dimensional Structures With Asymmetrical QDs and Asymmetrical Tunnel-Coupled QDs -- 4.5.4 Electron Localization in Ge/Si Heterostructures With Double QDs -- 4.6 Ge/Si QDs for Near- and Mid-Infrared Photodetection -- 4.6.1 Near-Infrared Photodetectors Operating at 1.3-1.55μm -- 4.6.2 Mid-Infrared Photoresponse of Ge/Si QDs -- Acknowledgments -- References -- 5 Electron Transport: From Nanostructures to Nanoelectromechanical Systems -- 5.1 Introduction -- 5.2 Electron Transport in Antidot Lattices -- 5.3 Electron Transport in "Star" and "Caterpillar" Billiards -- 5.4 Weak Localization in a Square Antidot Lattice -- 5.5 Mesoscopic Conductance Fluctuations in Sinai Billiards -- 5.6 Hysteretic Magnetoresistance of a Two-Dimensional Electron Gas in the Quantum Hall Effect Regime -- 5.7 Ballistic Effects in a Suspended 2DEG -- 5.8 Suspended 2DEG Structured With an Antidot Lattice -- 5.9 Quantum Hall Effect in Suspended Hall Bars -- 5.10 Suspended Quantum Point Contact -- 5.11 Suspended Single-Electron Transistor -- 5.12 Euler Buckling Instability of Suspended Nanostructures. , 5.13 Nonlinear Dynamics of Suspended Nanostructures -- Acknowledgments -- References -- 6 Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures -- 6.1 Introduction -- 6.2 Quantum Point Contacts -- 6.3 Two-Terminal and Three-Terminal Quantum Dots -- 6.4 Small Ring Interferometers -- 6.5 Graphene-Like Lattices of Quantum Antidots and Quantum Dots -- 6.6 Conclusions -- Acknowledgments -- References -- 7 Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems -- 7.1 Phonons in Semiconductor Superlattices -- 7.1.1 GaAs/AlAs Superlattices -- 7.1.2 GaSb/AlSb Superlattices -- 7.2 Plasmon-Phonon Modes in GaAs/AlAs Superlattices -- 7.3 Phonons in QD Structures -- 7.3.1 Relaxed QDs Fabricated by Langmuir-Blodgett Technology -- 7.3.2 Relaxed Ge/SiO2 QDs -- 7.3.3 Strained GeSi/Si QDs -- 7.3.4 A3B5 QDs -- 7.4 Phonons in Nanostructures: From Array Toward a Single Nanostructure -- 7.4.1 Resonant Raman Scattering -- 7.4.2 Surface-Enhanced Raman Scattering -- Acknowledgments -- References -- II. Surface, Interface, Epitaxy -- 8 Atomic Processes on the Silicon Surface -- 8.1 Introduction -- 8.2 Experimental Method -- 8.2.1 In Situ Ultrahigh Vacuum Reflection Electron Microscopy -- 8.2.2 Preparation of an Atomically Clean Si Surface -- 8.3 Step Motion on Vicinal and Step-Free Si(111) Surfaces During Sublimation -- 8.4 Instability of the Regular Step Train -- 8.4.1 Instability of Step Train During Sublimation and the Effect of Adatom Electromigration -- 8.4.2 Effective Charge of Si Adatom on the Si(111) Surface -- 8.4.3 The Behavior of Monatomic Steps During (1×1)⇔(7×7) Phase Transition -- 8.5 Step Motion During Si Growth -- 8.5.1 Si Growth on the Nonreconstructed Si(111) Surface -- 8.5.2 Si Growth on the Step-Bunched Si(111)-(7×7) Surface -- 8.5.3 Si Growth on an Extra-Large Step-Free Si(111)-(7×7) Surface. , 8.6 Step Motion During Oxygen Etching -- 8.6.1 Interaction of Oxygen With the Si Surface -- 8.6.2 Kinetics of Negative 2D Island Nucleation and Growth During Oxygen Etching -- 8.7 Initial Stages of Heteroepitaxial Growth on the Si(111) Surface -- 8.8 Step-Bunching Induced by Gold Adsorption on the Si(111) Surface -- 8.9 Conclusion -- Acknowledgment -- References -- 9 Atomic Structure of Semiconductor Low-Dimensional Heterosystems -- 9.1 Analytical HREM -- 9.2 Automodulation of Chemical Composition in CdxHg1−xTe Films -- 9.3 Nanocrystal Visibility Limits in an Amorphous Matrix -- 9.4 The Geometrical Phase Method for Quantitative Analysis of Crystalline Lattice Deformations -- 9.5 Atomic Structures of Multicomponent Systems -- 9.5.1 Strained (InGaAsSb)-(GaSb) and (InAs)-(GaSb) Superlattices -- 9.5.2 Film and Interface Structures in Heterosystem GaAs-GaP-Si (001) -- 9.6 Iron Disilicide in a Silicon Matrix -- Acknowledgments -- References -- 10 Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions -- 10.1 Introduction -- 10.2 GaAs Surface Thermal Smoothing Technique -- 10.3 Thermal Smoothing GaAs(001) Surface: Isochronal Anneals at Various Temperatures -- 10.4 GaAs(001) Surface Smoothing Kinetics -- 10.5 MC Simulation of GaAs Step-Terraced Surface Formation -- 10.6 Step-Terraced GaAs(001) Surfaces With Straight Monatomic Steps Induced by Dislocations -- 10.7 Conclusions -- Acknowledgments -- References -- 11 Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky-Krastanov Gr... -- 11.1 Introduction -- 11.2 Surface Preparation, Growth of Ge and STM Measurements -- 11.3 Formation Ge Wetting Layer on Si(111) -- 11.4 The Transition from the Wetting Layer to Three-Dimensional Growth of Ge on Si(111) -- 11.5 Formation of a Wetting Layer and Hut-clusters of Ge on Si(001). , 11.6 Conclusion -- Acknowledgments -- References -- 12 Molecular Beam Epitaxy of CdxHg1−xTe -- 12.1 Advantages and Problems of MBE MCT -- 12.2 Defects Caused by the Use of Substrates From Nonisovalent Compounds -- 12.3 Processes in the Adsorption Layer at MBE CdxHg1−xTe and CdTe -- 12.4 MBE System for Growing Narrow-Gap Solid Solutions Containing Mercury -- 12.5 Growing Heteroepitaxial MCT Structures on a GaAs Substrate -- 12.5.1 Zinc Telluride Epitaxy -- 12.5.2 Epitaxial Growth of Cadmium Telluride -- 12.5.3 MCT Growth -- 12.5.4 The Nature of V-Shaped Defects in HgCdTe Epilayers Grown by MBE -- 12.6 The Homogeneity of the Composition and Electrical Properties of Heteroepitaxial of MCT on a GaAs Substrate -- 12.7 Conclusion -- References -- 13 Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures -- 13.1 Introduction -- 13.2 Experimental Details -- 13.3 Epitaxial Ge Growth on Bare and Oxidized Si(001) Substrates in the Middle Temperature Range -- 13.4 Surface Morphologies Obtained by Ge Deposition on Si(001) at High Temperatures -- 13.5 Ge Epitaxial Growth on Si(111) Substrates in the Middle Temperature Range -- 13.6 High-Temperature Structures of SiGe on Si(111) -- 13.7 Surface Morphologies After Deposition of Large Ge Coverages -- Acknowledgments -- References -- 14 Monte Carlo Simulation of Semiconductor Nanostructure Growth -- 14.1 Introduction -- 14.2 Silicon Nanoclusters in Silicon Dioxide -- 14.3 Nanowhisker Growth -- 14.4 Si Nanowhiskers -- 14.5 Au-Catalyzed and Self-Catalyzed GaAs Nanowhisker Growth -- References -- III. Radiation Effects on Semiconductor Structures -- 15 The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing) -- 15.1 Introduction -- 15.2 Heating and Cooling During Laser Annealing -- 15.3 Solid-Phase Crystallization. , 15.4 Melting and Liquid-Phase Crystallization.

Weitere Ausg.: ISBN 9780128105122

Weitere Ausg.: ISBN 0128105127

Weitere Ausg.: ISBN 9780128105139

Weitere Ausg.: ISBN 0128105135

Sprache: Englisch