UID:
almahu_9949697620702882
Format:
1 online resource (489 p.)
ISBN:
0-444-60130-9
Series Statement:
Chemical physics of solid surfaces and heterogeneous catalysis ; v. 5
Content:
The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis
Note:
Description based upon print version of record.
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Front Cover; Surface Properties of Electronic Materials; Copyright Page; Preface; Table of Contents; Chapter 1. Surface science and electronic materials. An overview; 1. Introduction; 2. Semiconductor surfaces and interfaces; 3. Metal-semiconductor interfaces; 4. Semiconductor-semiconductor interfaces; References; Chapter 2. Structural and electronic properties of elemental semiconductors and surfaces; 1. Introduction; 2. Bonding and electronic states in bulk silicon; 3. The atomic geometry of the Si(100) (2 X 1) surface; 4. The atomic geometry of the cleaved Si (111 ) (2 X 1) surface
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5. The atomic geometry of the equilibrium Si(111) (7 X 7) surface6. The ""new"" reconstructions; Acknowledgements; References; Chapter 3. Atomic geometry and electronic structure of tetrahedrally coordinated compound semiconductor interfaces; 1. Introduction; 2. Zincblende(110); 3. Adsorbate structures on zincblende(110); 4. Polar surfaces of zincblende structure materials; 5. Wurtzite structure materials. ZnO; 6. Synopsis; Acknowledgements; References; Chapter 4. Adsorption and Schottky barrier formation on compound semiconductor surfaces; 1. Introduction; 2. Gas-phase adsorption
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3. Semiconductor adsorption on semiconductor substrates. Heterojunction interfaces4. Adsorption of metals. Schottky barrier formation; Acknowledgements; References; Chapter 5. Adsorption on elemental semiconductors; 1. Introduction; 2. Preparation of clean surfaces; 3. Intrinsic structure of Si surfaces; 4. Intrinsic structure of Ge surfaces; 5. Adsorption on Si; 6. Adsorption on Ge; 7. Summary; Acknowledgements; References; Chapter 6. Adsorption and reaction of metals on elemental semiconductors; 1. Introduction; 2. Structural evidence for the reaction at room temperature
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3. The electronic states of silicides4. The interface reaction as seen with electronic state spectroscopy; 5. A scheme for interface growth at room temperature; 6. Selected topics connected with the scheme of interface growth; References; Chapter 7. Molecular beam epitaxy of III-V compounds. Aspects of growth kinetics and dynamics; 1. Introduction; 2. The GaAs(001) surface; 3. Thermodynamic and kinetic factors involved in the MBE process; 4. Growth dynamics; Acknowledgements; References; Chapter 8. Molecular beam epitaxy of silicon and related materials; 1. Introduction
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2. Molecular beam epitaxy3. The technology of MBE; 4. Substrate preparation; 5. Crystallographic perfection; 6. Evaluation of undoped homoepitaxial silicon; 7. Doping; 8. Silicides; 9. Silicon-on-insulator structures; 10. The Six Ge1-x system; 11. Device applications; 12. Future prospects; Acknowledgements; References; Chapter 9. Molecular beam epitaxy of insulators, metastable phases and II-VI compounds; 1. Introduction; 2. Factors controlling the range of materials accessible to MBE growth techniques; 3. MBE growth and properties of epitaxial insulators
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4. MBE growth and properties of metastable phases
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English
Additional Edition:
ISBN 0-444-42782-1
Language:
English
