UID:
almafu_9959712236902883
Format:
1 online resource (XVI, 390 p.)
ISBN:
9783110575507
Series Statement:
De Gruyter Textbook
Content:
The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
Note:
Frontmatter --
,
Preface --
,
How to Use the Book --
,
Contents --
,
1 Introduction --
,
2 Solid-State Physics Foundation --
,
3 Semiconductor Fabrication --
,
4 Basic Ingredients for Nanoelectronics Devices --
,
5 Metal–Oxide–Semiconductor Field-Effect Transistors --
,
6 Device Simulation --
,
7 Metal–Source–Drain Field-Effect Transistors --
,
8 Carbon Nanotube Field-Effect Transistors --
,
9 Steep Slope Transistors --
,
10 Device Based on Two-Dimensional Materials --
,
A Color Map for 2D Materials --
,
Bibliography --
,
Index
,
In English.
Additional Edition:
ISBN 9783110575552
Additional Edition:
ISBN 9783110574210
Language:
English
Subjects:
Engineering
,
Physics
DOI:
10.1515/9783110575507
URL:
https://doi.org/10.1515/9783110575507
URL:
https://www.degruyter.com/isbn/9783110575507
URL:
Volltext
(URL des Erstveröffentlichers)
URL:
https://doi.org/10.1515/9783110575507
URL:
https://www.degruyter.com/isbn/9783110575507
