UID:
edocfu_9961075017302883
Format:
1 online resource (32 pages) :
,
color illustrations.
Series Statement:
NREL/PR ; 520-43248
Content:
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
Note:
Published through the Information Bridge: DOE Scientific and Technical Information.
,
"May 2008."
,
Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
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National Renewable Energy Laboratory (NREL), Golden, CO.
Language:
English
