Format:
Online-Ressource (1 online resource (632 p.))
,
digital, PDF file(s).
Edition:
Online-Ausg.
ISBN:
9780511599828
Series Statement:
Cambridge Studies in Semiconductor Physics and Microelectronic Engineering no. 1
Content:
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities
Note:
Title from publisher's bibliographic system (viewed on 05 Oct 2015)
Additional Edition:
ISBN 9780521419192
Additional Edition:
ISBN 9780521017848
Additional Edition:
Erscheint auch als Druck-Ausgabe Schubert, Erdmann Fred, 1956 - Doping in III-V semiconductors Cambridge [u.a.] : Cambridge Univ. Press, 1993 ISBN 0521419190
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 9780521419192
Language:
English
Keywords:
Halbleiter
;
Dotierung
DOI:
10.1017/CBO9780511599828
