Format:
Online-Ressource
ISSN:
1612-8869
Content:
Abstract: The diffusion of Cu through TaN‐based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayer barrier of 50 nm:50 nm:50 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN‐based thin layers were determined from glancing incidence angle X‐ray diffraction and transmission electron microscopy, conducted in the temperature range of 773–973 K. The TaN/Ta/TaN barrier appeared to be more efficient than the TaN single layer in preventing Cu diffusion.
In:
volume:6
In:
number:S1
In:
year:2009
In:
pages:S844-S848
In:
extent:5
In:
Eleventh International Conference on Plasma Surface Engineering (PSE2008) 1
In:
Plasma processes and polymers, Weinheim : Wiley-VCH, [2004]-, 6, Heft S1 (2009), S844-S848 (gesamt 5), Eleventh International Conference on Plasma Surface Engineering (PSE2008) 1, 1612-8869
Language:
English
DOI:
10.1002/ppap.200932107
URN:
urn:nbn:de:101:1-2023042006150552803615
URL:
https://doi.org/10.1002/ppap.200932107
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023042006150552803615
URL:
https://d-nb.info/1286703131/34
URL:
https://doi.org/10.1002/ppap.200932107
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