Format:
Online-Ressource
ISSN:
1610-1642
Content:
Abstract: The behaviour of catalyst free GaAs nanowire growth is investigated on (111) Si substrate by molecular beam epitaxy under different Ga and As fluxes. It is found that the diameter of nanowire is increased by increasing the Ga flux, while it is decreased by increasing the As flux. The growth rate along the wire axis is enhanced by increasing the As flux under a constant Ga flux. Moreover, the Ga droplet at the top disappears by the growth interruption and the growth along the wire axis is strictly prohibited. By adopting the last result, the growth of GaAs/AlGaAs core‐shell structure is attempted. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
In:
volume:6
In:
number:6
In:
year:2009
In:
pages:1436-1440
In:
extent:5
In:
Physica status solidi / C. C, Current topics in solid state physics, Berlin : Wiley-VCH, 2002-2017, 6, Heft 6 (2009), 1436-1440 (gesamt 5), 1610-1642
Language:
English
DOI:
10.1002/pssc.200881520
URN:
urn:nbn:de:101:1-2023041205163384068415
URL:
https://doi.org/10.1002/pssc.200881520
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023041205163384068415
URL:
https://d-nb.info/1285955013/34
URL:
https://doi.org/10.1002/pssc.200881520
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