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  • 1
    Book
    Book
    Singapore [u.a.] : World Scientific
    UID:
    (DE-627)123836263
    Format: XIV, 311 S , graph. Darst.
    ISBN: 9810208642 , 9810209886
    Note: Literaturverz. S. 310 - 311
    Language: English
    Subjects: Physics
    RVK:
    Keywords: Halbleitergrenzfläche ; Elektronische Eigenschaft ; Optische Eigenschaft ; Magnetische Eigenschaft ; Aufsatzsammlung
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Online Resource
    Online Resource
    Kiel : Universitätsbibliothek Kiel
    UID:
    (DE-101)1138980161
    Format: Online-Ressource
    Note: Dissertation Kiel, Christian-Albrechts-Universität 2013
    Additional Edition: Erscheint auch als Druck-Ausgabe Feng, Zhe, 1978- Functional relevance of epigenetic modifications in inflammatory bowel disease
    Language: English
    Keywords: Hochschulschrift
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  • 3
    Online Resource
    Online Resource
    Kiel : Universitätsbibliothek Kiel
    UID:
    (DE-603)416426719
    Format: Online-Ressource
    Note: Dissertation Kiel, Christian-Albrechts-Universität 2013
    Additional Edition: Erscheint auch als Druck-Ausgabe Feng, Zhe, 1978- Functional relevance of epigenetic modifications in inflammatory bowel disease
    Language: English
    Keywords: Hochschulschrift
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  • 4
    UID:
    (DE-101)103806208X
    Format: 135 S. , Ill., graph. Darst. , 30 cm
    Note: Kiel, Univ., Diss., 2013
    Additional Edition: Erscheint auch als Online-Ausgabe Feng, Zhe, 1978- Functional relevance of epigenetic modifications in inflammatory bowel disease Kiel : Universitätsbibliothek Kiel, 2017
    Language: English
    Keywords: Hochschulschrift
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  • 5
    Book
    Book
    Singapore : World Scientific
    UID:
    (DE-627)183063783
    Format: XX, 465 S , graph. Darst
    ISBN: 9810216343
    Note: Includes bibliographical references
    Language: English
    Subjects: Physics
    RVK:
    Keywords: Silicium ; Poröser Stoff
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  • 6
    Online Resource
    Online Resource
    CRC Press
    UID:
    (DE-605)HT021809723
    Format: 1 Online-Ressource
    ISBN: 9780429062582
    Additional Edition: 9781439855744
    Language: Undetermined
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  • 7
    Online Resource
    Online Resource
    CRC Press
    UID:
    (DE-605)HT021809640
    Format: 1 Online-Ressource
    ISBN: 9781315151595
    Additional Edition: 9781498741415
    Language: Undetermined
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  • 8
    Online Resource
    Online Resource
    London : Imperial College Press
    UID:
    (DE-627)802739202
    Format: Online Ressource (xii, 428 p.) , ill.
    Edition: Online-Ausg.
    ISBN: 1860946364 , 9781860946363 , 1860949037 , 9781860949036
    Content: III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals
    Note: Includes bibliographical references. - Description based on print version record , CoverContents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides.
    Additional Edition: 1860946364
    Additional Edition: 1860949037
    Additional Edition: 9781860946363
    Additional Edition: 9781860949036
    Additional Edition: Available in another form III-nitride
    Language: English
    Keywords: Electronic book ; Electronic books
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  • 9
    Book
    Book
    Boca Raton, FL : CRC Press, Taylor & Francis Group
    UID:
    (DE-627)87589688X
    Format: xvii, 703 pages , Illustrationen, Diagramme
    ISBN: 9781498741415 , 149874141X
    Series Statement: Series in optics and optoelectronics 25
    Content: From the dawn of GaN-based light-emitting devices to the present day / Hiroshi Amano -- Spectrum-related quality of white-light sources / Yuejun Sun, Dragan Sekulovski, Kees Teunissen, Mart Peeters, Remy Broersma and Rene Wegh -- Nanofabrication of III-nitride emitters for solid-state lighting / Tao Wang and Yaonan Hou -- III-nitride deep-ultraviolet materials and applications / Jianwei Ben, Xiaojuan Sun, and Dabing Li -- Efficiency droop of nitride-based light-emitting diodes / Chia-Yen Huang and Hao-Chung Kuo -- Design and fabrication of patterned sapphire substrates (PSS) for GaN-based light-emitting diodes / Guoqiang Li, Haiyan Wang and Zhiting Lin -- Surface plasmon coupled light-emitting diodes / Chia-Ying Su, Chun-Han Lin, Yang Kuo, Yu-Feng Yao, Hao-Tsung Chen, Charng-Gan Tu, Chieh Hsieh, Horng-Shyang Chen, Yean-Woei Kiang, and C.C. Yang -- Deep level traps in GaN epilayer and LED / Xuan Sang Nguyen and Soo Jin Chua -- Photoluminescence dynamics in InGaN/GaN multiple quantum well light-emitting diodes / Tao Lin and Zhe Chuan Feng -- Technological developments of UV-LEDs / C.H. Chiu, P.M. Tu, T.C. Hong, C.C. Peng, C.S. Huang and S.C. Huang -- Influence of carrier localization on efficiency droop and stimulated emission in AlGaN quantum wells / Gintautas Tamulaitis -- Solar-blind AlGaN devies / Jingwen Chen, Jun Zhang, Wei Zhang, Shuai Wang, Feng Wu, Jiangnan Dai, and Changqing Chen -- Laser diode-driven white light sources / Faiz Rahman -- InGaN laser diodes by plasma assisted molecular beam epitaxy / Czeslaw Skierbiszewski, Muziol Grzegorz, Turski Henryk, Siekacz Marcin, and Marta Sawicka -- GaN-based blue and green laser diodes / Jianping Liu and Hui Yang -- Nano and other types of LEDs -- Photonic crystal light-emitting diodes by nanosphere lithography / Kwai Hei Li and Hoi Wai Choi -- ZnO-based LEDs / Hao Long -- Natural light-style organic light-emitting diodes / Jwo-Huei Jou, Meenu Singh, and Yi-Fang Tsai -- III-nitride semiconductor LEDs grown on Si and stress control of GaN epitaxial / Baijun Zhang and Yang Liu -- A hole accelerator for III-nitride light-emitting diodes / Zi-Hui Zhang, Yonghui Zhang, Xiao Wei Sun, and Wengang Bi -- MOCVD growth of GaN on foundry compatible 200 mm Si / Li Zhang, E.K. Kenneth Lee, A. Eugene Fitzgerald, and Jin Soo -- Terahertz spectroscopy study of III-V nitrides / Xinhai Zhang and Huafeng Shi -- Internal luminescence mechanisms of III-nitride LEDs / Shijie Xu -- Fabrication of thin film nitride-based light-emitting diodes / Ray-Hua Horng, Dong-Sing Wuu, and Chia-Feng Lin
    Additional Edition: Erscheint auch als Online-Ausgabe Handbook of solid-state lighting and LEDs Boca Raton, FL : CRC Press, Taylor & Francis Group, 2017 9781498741422
    Additional Edition: 9781315151595
    Language: English
    Subjects: Engineering
    RVK:
    Keywords: Organischer Halbleiter
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  • 10
    Online Resource
    Online Resource
    Baton Rouge : Taylor & Francis Group
    UID:
    (DE-627)1746308575
    Format: 1 online resource (563 pages)
    Edition: 1st ed.
    ISBN: 9781439855751
    Content: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering and materials science, Handbook of Zinc Oxide and Related Materials provides a comprehensive, up-to-date review of various technological aspects of ZnO. Volume Two focuses on devices and nanostructures created from ZnO and similar materials. The book covers various nanostructures, synthesis/creation strategies, device behavior, and state-of-the-art applications in electronics and optoelectronics. It also provides useful information on the device and nanoscale process and examines the fabrication of LEDs, LDs, photodetectors, and nanodevices. Covering key properties and important technologies of ZnO-based devices and nanoengineering, the handbook highlights the potential of this wide gap semiconductor. It also illustrates the remaining challenging issues in nanomaterial preparation and device fabrication for R&D in the twenty-first century.
    Content: Cover -- Half Title -- Title Page -- Copyright Page -- Table of Contents -- Preface -- Editor -- Contributors -- Part I: ZnO-Based Nanostructures -- 1: Metalorganic Vapor Deposition and Characterization of ZnO-Based Nanostructures and Thin Films -- 2: Solution-Grown n-Type ZnO Nanostructures: Synthesis, Microstructure, and Doping -- 3: Heteroepitaxy of ZnO on SiC as a Route toward Nanoscale p-n Junction -- 4: ZnO-Based Nanostructures -- Part II: ZnO-Based Optoelectronic Devices -- 5: Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions -- 6: Light-Emitting Diodes Based on n-ZnO/n-Si(GaAs) Isotype Heterojunctions -- 7: ZnO Thin Films, Quantum Dots, and Light-Emitting Diodes Grown by Atomic Layer Deposition -- 8: Hybrid Light-Emitting Diodes Based on ZnO Nanowires -- 9: ZnBeMgO Alloys and UV Optoelectronic Applications -- 10: Ultraviolet ZnO Random Laser Diodes -- Part III: ZnO-Based Electronic Devices and Application -- 11: Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides -- 12: Growth of ZnO for Neutron Detectors -- 13: Amorphous In-Ga-Zn-O Thin Film Transistors: Fabrication and Properties -- Index.
    Note: Description based on publisher supplied metadata and other sources
    Additional Edition: 9781439855744
    Additional Edition: Erscheint auch als Druck-Ausgabe 9781439855744
    Language: English
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