Format:
Online-Ressource (1 PDF (vii, 65 pages))
,
illustrations.
ISBN:
9781627058537
Series Statement:
Synthesis lectures on emerging engineering technologies # 3
Content:
2. GaN-based HEMTs and MOSHEMTs -- 2.1 GaN MOSHEMT for RF applications -- 2.2 Ultra-scaled-down device architecture -- 2.3 Monolithic integration of GaN HEMT with LED --
Content:
3. III-V materials and devices -- 3.1 III-V heterostructures for high electron mobility transistors -- 3.2 III-V high-mobility channel MOSFETs -- 3.3 Monolithic integration of III-V FETs on Si --
Content:
4. Summary -- References -- Authors' biographies
Content:
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices
Note:
Part of: Synthesis digital library of engineering and computer science. - Includes bibliographical references (pages 47-62). - Compendex. INSPEC. Google scholar. Google book search. - Title from PDF title page (viewed on March 19, 2016)
,
1. Introduction --
Additional Edition:
ISBN 9781627058520
Additional Edition:
Erscheint auch als Druck-Ausgabe ISBN 978-1-62705-852-0
Language:
English
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