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  • 1
    UID:
    (DE-605)HT014591335
    Format: S. 1543 - 2082, 7 S. : Ill., graph. Darst.
    Series Statement: Selected topics in applied physics 1
    Language: English
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  • 2
    UID:
    (DE-627)1687347344
    ISBN: 9783161589249
    In: Deutsch-Japanisches Verfassungsgespräch (2. : 2017 : Lenzkirch-Saig; Freiburg im Breisgau), Verfassungsentwicklung II, Tübingen : Mohr Siebeck, 2019, (2019), Seite 101-108, 9783161589249
    In: 3161589246
    In: year:2019
    In: pages:101-108
    Language: German
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  • 3
    UID:
    (DE-627)821331078
    Format: XVIII, 289 S. , Ill., graph. Darst , 235 mm x 155 mm
    ISBN: 4431553711 , 9784431553717
    Content: Literaturangaben
    Additional Edition: 9784431553724
    Additional Edition: Online-Ausg. Matsumoto, Kazuhiko Frontiers of Graphene and Carbon Nanotubes [s.l.] : Springer-Verlag, 2015 9784431553724
    Language: English
    Keywords: Graphen ; Kohlenstoff-Nanoröhre
    URL: Cover
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  • 4
    UID:
    (DE-627)1624939651
    ISSN: 0506-7286
    In: Verfassung und Recht in Übersee, Baden-Baden : Nomos-Verl.-Ges., 1968, 41(2008), 4, Seite 467-476, 0506-7286
    In: volume:41
    In: year:2008
    In: number:4
    In: pages:467-476
    Language: German
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  • 5
    UID:
    (DE-604)BV042482219
    Format: 1 Online-Ressource (XVIII, 289 p. 214 illus., 183 illus. in color)
    ISBN: 9784431553724
    Additional Edition: Erscheint auch als Druckausgabe ISBN 978-4-431-55371-7
    Language: English
    Keywords: Nanoröhre ; Graphen ; Aufsatzsammlung
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  • 6
    Online Resource
    Online Resource
    [s.l.] : Springer-Verlag
    UID:
    (DE-627)1655894374
    Format: Online-Ressource (XVIII, 289 p. 214 illus., 183 illus. in color, online resource)
    ISBN: 9784431553724
    Series Statement: SpringerLink
    Content: CVD Growth of High-Quality Single-Layer Graphene -- Graphene Laser Irradiation CVD Growth -- Graphene Direct Growth on Si/SiO2 Substrates -- Direct growth of graphene and graphene nanoribbon on an insulating substrate by rapid-heating plasma CVD -- Graphene/metal contact -- Low-temperature Synthesis of Graphene and Fabrication of Top-gated Field Effect Transistors Using Transfer-Free Processes for Future LSIs -- Graphene Biosensor -- Graphene Terahertz Devices -- Carbon nanotube synthesis and the role of catalyst -- Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates -- Plasma doping processes for CNT devices -- Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors -- Electrochemical Biological sensors Based on Directly Synthesized Carbon Nanotube Electrodes -- Nanomechanical application of CNT -- Carbon Nanotube Quantum Nanomemory -- Control of Particle nature & Wave nature of Electron in CNT -- Quantum Dot Devices with Carbon Nanotubes -- High-mobility Thin Film Transistors for Flexible Electronics Applications.
    Content: This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development.
    Note: Description based upon print version of record , CVD Growth of High-Quality Single-Layer GrapheneGraphene Laser Irradiation CVD Growth -- Graphene Direct Growth on Si/SiO2 Substrates -- Direct growth of graphene and graphene nanoribbon on an insulating substrate by rapid-heating plasma CVD -- Graphene/metal contact -- Low-temperature Synthesis of Graphene and Fabrication of Top-gated Field Effect Transistors Using Transfer-Free Processes for Future LSIs -- Graphene Biosensor -- Graphene Terahertz Devices -- Carbon nanotube synthesis and the role of catalyst -- Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates -- Plasma doping processes for CNT devices -- Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors -- Electrochemical Biological sensors Based on Directly Synthesized Carbon Nanotube Electrodes -- Nanomechanical application of CNT -- Carbon Nanotube Quantum Nanomemory -- Control of Particle nature & Wave nature of Electron in CNT -- Quantum Dot Devices with Carbon Nanotubes -- High-mobility Thin Film Transistors for Flexible Electronics Applications.
    Additional Edition: 9784431553717
    Additional Edition: Druckausg. Matsumoto, Kazuhiko Frontiers of graphene and carbon nanotubes Tokyo : Springer, 2015 4431553711
    Additional Edition: 9784431553717
    Language: English
    Keywords: Graphen ; Kohlenstoff-Nanoröhre
    URL: Cover
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  • 7
    Online Resource
    Online Resource
    Tokyo : Springer Japan | Cham : Springer International Publishing AG
    UID:
    (DE-603)358010187
    Format: 1 Online-Ressource (XVIII, 289 Seiten) , 214 illus., 183 illus. in color.
    Edition: 1st ed. 2015
    ISBN: 9784431553724 , 443155372X
    Additional Edition: Erscheint auch als Druck-Ausgabe Frontiers of Graphene and Carbon Nanotubes Tokyo : Springer Japan, 2015 9784431553731
    Additional Edition: 9784431553731
    Additional Edition: 9784431553717
    Additional Edition: 9784431563464
    Language: English
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  • 8
    UID:
    (DE-627)1746142413
    Format: 1 online resource (295 pages)
    Edition: 1st ed.
    ISBN: 9784431553724
    Content: Intro -- Preface -- Contents -- About the Authors -- Part I Graphene -- 1 CVD Growth of High-Quality Single-Layer Graphene -- 1.1 Introduction -- 1.2 Preparation Methods of Graphene -- 1.3 CVD Growth Over Metal Catalyst -- 1.4 CVD Growth Over Heteroepitaxial Co Films -- 1.5 CVD Growth Over Heteroepitaxial Cu Films -- 1.6 Increasing Graphene Domain Size on Heteroepitaxial Cu Films -- 1.7 Recent Progress and Future Prospect -- 1.8 Summary -- References -- 2 Graphene Laser Irradiation CVD Growth -- 2.1 Introduction -- 2.2 Experimental Procedure -- 2.3 Results and Discussion -- 2.4 Conclusion -- References -- 3 Graphene Direct Growth on Si/SiO2 Substrates -- 3.1 Introduction -- 3.2 Experimental Procedure -- 3.3 Results and Discussion -- 3.4 Conclusion -- References -- 4 Direct Growth of Graphene and Graphene Nanoribbon on an Insulating Substrate by Rapid-Heating Plasma CVD -- 4.1 Direct Growth of 2D Graphene Sheet -- 4.2 Direct Growth of 1D Graphene: Graphene Nanoribbon -- 4.3 Conclusions -- References -- 5 Graphene/Metal Contact -- 5.1 Fundamental Issues Concerning the Carrier Injection -- 5.2 Graphene/Metal Interaction -- 5.3 Energy-Band Diagrams -- 5.4 The p-n Junction Formation -- 5.5 Electron Transport and Contact Resistivity -- 5.5.1 Current Flow Path at the Metal/Graphene Contact and Contact Resistivity -- 5.5.2 Correlation Between Contact Resistivity and DOS -- 5.6 The Requirement for Contact Resistivity -- 5.7 Conclusions and Future Outlook -- References -- 6 Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field-Effect Transistors Using Transfer-Free Processes for Future LSIs -- 6.1 Introduction -- 6.2 Low-Temperature Synthesis of Graphene with Chemical Vapor Deposition -- 6.3 Fabrication of Top-Gated Field-Effect Transistors Without Using Transfer Processes.
    Note: Description based on publisher supplied metadata and other sources
    Additional Edition: 9784431553717
    Additional Edition: Erscheint auch als Druck-Ausgabe 9784431553717
    Language: English
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  • 9
    UID:
    (DE-627)1659982944
    Format: H. 6, S. 24 - 59
    ISSN: 0389-0538
    In: Hōgaku kenkyū, Tōkyō : Keiō Gijuku Daigaku Hōgaku Kenkyūkai, 1922, 64(1991), 6, Seite 24 - 59, 0389-0538
    In: volume:64
    In: year:1991
    In: number:6
    In: pages:24 - 59
    Language: Japanese
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  • 10
    Book
    Book
    Tokyo : Japan Society of Applied Physics
    UID:
    (DE-627)1188018868
    Format: S. 1543 - 2082, 7 S. , Ill., graph. Darst.
    Series Statement: Selected topics in applied physics 1
    Language: English
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