Format:
Online-Ressource
ISSN:
1521-3951
Content:
Abstract: We report the first investigation of compositional disorder in quantum dots with subnanometer precision. We have investigated the compositional profile of a single InGaAs/GaAs quantum dot, of nominal In content x = 0.5, by using energy‐dispersive X‐ray spectroscopy (EDX), transmission electron microscopy (TEM), and atomic force and scanning tunneling microscope (AFM‐STM) topography. The compositional analysis at nanoscale reveals a number of unexpected features: (i) In enrichment of the centre of the dot (about 65% In content); (ii) In diffusion outside the dot contour; (iii) In depletion of the wetting layer in the surrounding of the dot.
In:
volume:224
In:
number:1
In:
year:2001
In:
pages:17-20
In:
extent:4
In:
Physica status solidi / B. B, Basic solid state physics, Weinheim : Wiley-VCH, [1971]-, 224, Heft 1 (2001), 17-20 (gesamt 4), 1521-3951
Language:
English
DOI:
10.1002/1521-3951(200103)224:1〈17::AID-PSSB17〉3.0.CO;2-Z
URN:
urn:nbn:de:101:1-2023102004422362228842
URL:
https://doi.org/10.1002/1521-3951(200103)224:1〈17::AID-PSSB17〉3.0.CO;2-Z
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023102004422362228842
URL:
https://d-nb.info/130666974X/34
URL:
https://doi.org/10.1002/1521-3951(200103)224:1〈17::AID-PSSB17〉3.0.CO;2-Z
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