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  • 1
    UID:
    (DE-627)1658409264
    Format: 1 online resource (349 pages)
    ISBN: 9789812794703
    Series Statement: Selected Topics in Electronics and Systems Ser. v.34
    Content: Key Features:Extensive treatment of radiation effects in high performance devicesContributions from a wide range of experts in the radiation-effects fieldDetailed consideration of radiation effects in commercial MOS and bipolar technologies, as well as SOI devices, power devices, photonics, and high-energy physics experimentsDescription of radiation effects in terrestrial and space environmentsOverview of design approaches for radiation-tolerant integrated circuits.
    Content: Intro -- CONTENTS -- Preface -- Single Event Effects in Avionics and on the Ground -- 1. Introduction -- 2. Similarities between SEE in Avionics and on the Ground -- 3. Differences Between SEE in Avionics and on the Ground -- 4. Atmospheric and Ground Level Environments -- 5. SEE Data in devices -- 6. Summary -- Soft Errors in Commercial Integrated Circuits -- 1. Introduction -- 2. Scaling trends for memory devices -- 3. Seating trend for peripheral logic devices -- 4. Conclusion -- Single-Event Effects in lll-V Semiconductor Electronics -- 1. Introduction -- 2. Single-Event Effects in lll-V Electronic Devices -- 3. Summary and Conclusions -- Investigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser -- 1. Basic Mechanisms of a SET -- 2. SET Laser Testing -- 3. Experimental set-up for SET laser testing -- 4. Results -- 5. Conclusions -- System Level Single Event Upset Mitigation Strategies -- 1. Introduction -- 2. Systems Engineering for Energetic Particle Environment Compatibility -- 3. Fault Tolerant Systems Strategies -- Radiation-Tolerant Design for High Performance Mixed-Signal Circuits -- 1. Introduction -- 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits -- 3. Process Component and Layout Choices for Hardened-by-Design Circuits -- 4. Total Dose Hardening -- 5. Single-Event Effect Hardening -- 6. Dose-Rate Effect Hardening -- 7. Conclusion -- A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits -- 1. Introduction -- 2. Closed Geometry Transistors -- 3. Circuit Application-Functional Description -- 4. Performance of HBD APHY Circuit -- 5. Conclusions -- Radiation Issues in the New Generation of High Energy Physics Experiments -- 1. Introduction -- 2. The Radiation Environment -- 3. SEU Rate Estimate in the LHC -- 4. Radiation-Hard ASICs Design.
    Note: Description based on publisher supplied metadata and other sources
    Additional Edition: 9789812389404
    Additional Edition: Erscheint auch als Druck-Ausgabe Radiation effects and soft errors in integrated circuits and electronic devices New Jersey [u.a.] : World Scientific, 2004 9812389407
    Language: English
    Subjects: Engineering
    RVK:
    Keywords: Elektronische Schaltung ; Strahlungseffekt ; Integrierte Schaltung ; Strahlungseffekt
    URL: Volltext  (lizenzpflichtig)
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  • 2
    UID:
    (DE-604)BV044839954
    Format: viii, 339 p.
    ISBN: 9789812389404 , 9812389407
    Series Statement: Selected topics in electronics and systems vol. 34
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623 , Includes bibliographical references
    Language: English
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  • 3
    UID:
    (DE-627)474731022
    Format: VIII, 339 S , graph. Darst , 26cm
    Series Statement: Selected topics in electronics and systems 34
    Note: Literaturangaben
    Language: English
    Subjects: Engineering
    RVK:
    Keywords: Elektronische Schaltung ; Strahlungseffekt ; Integrierte Schaltung ; Bibliografie
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  • 4
    UID:
    (DE-602)edocfu_9959231990702883
    Format: 1 online resource (349 p.)
    Edition: 1st ed.
    ISBN: 1-281-93459-3 , 9786611934590 , 981-279-470-0
    Series Statement: Selected topics in electronics and systems ; vol. 34
    Uniform Title: International journal of high speed electronics and systems, v. 14, no. 2.
    Content: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes t
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623. , CONTENTS ; Preface ; Single Event Effects in Avionics and on the Ground ; 1. Introduction ; 2. Similarities between SEE in Avionics and on the Ground ; 3. Differences Between SEE in Avionics and on the Ground ; 4. Atmospheric and Ground Level Environments ; 5. SEE Data in devices , 6. Summary Soft Errors in Commercial Integrated Circuits ; 1. Introduction ; 2. Scaling trends for memory devices ; 3. Seating trend for peripheral logic devices ; 4. Conclusion ; Single-Event Effects in lll-V Semiconductor Electronics ; 1. Introduction , 2. Single-Event Effects in lll-V Electronic Devices 3. Summary and Conclusions ; Investigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser ; 1. Basic Mechanisms of a SET ; 2. SET Laser Testing ; 3. Experimental set-up for SET laser testing ; 4. Results , 5. Conclusions System Level Single Event Upset Mitigation Strategies ; 1. Introduction ; 2. Systems Engineering for Energetic Particle Environment Compatibility ; 3. Fault Tolerant Systems Strategies ; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits , 1. Introduction 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits ; 3. Process Component and Layout Choices for Hardened-by-Design Circuits ; 4. Total Dose Hardening ; 5. Single-Event Effect Hardening ; 6. Dose-Rate Effect Hardening ; 7. Conclusion , A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits , English
    Additional Edition: ISBN 981-238-940-7
    Language: English
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  • 5
    Online Resource
    Online Resource
    Singapore [u.a.] : World Scientific Pub. | Birmingham, AL, USA : EBSCO Industries, Inc.
    UID:
    (DE-603)420636978
    Format: 1 Online-Ressource (viii, 339 pages) , Illustrations
    ISBN: 9789812794703 , 9812794700
    Series Statement: Selected topics in electronics and systems vol. 34
    Content: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th.
    Note: Includes bibliographical references
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 6
    UID:
    (DE-604)BV044178861
    Format: viii, 339 p.
    ISBN: 9789812389404 , 9812389407
    Series Statement: Selected topics in electronics and systems vol. 34
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623 , Includes bibliographical references
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 7
    UID:
    (DE-627)1655996355
    Format: Online Ressource (viii, 339 p.) , ill.
    Edition: Online-Ausg.
    ISBN: 9789812794703 , 9812794700
    Series Statement: Selected topics in electronics and systems vol. 34
    Content: 2. Power MOSFET Technotogies3. Total Dose Ionizing Radiation Effects on Power MOSFETs; 4. Single Event Radiation Effects; 5. Conclusions; Introduction to SOI MOSFETs: Context Radiation Effects and Future Trends; 1. Introduction; 2. Current Status of SOI Technology; 3. Operation Mechanisms in SOI MOSFETs; 4. Radiation Effects on SOI MOSFETs; 5. Future Trends; 6. Conclusions; Total-Dose and Single-Event Effects in Silicon-Germanium Heterojunction Bipolar Transistors; 1. Introduction; 2. The SiGe HBT; 3. Radiation Response of SiGe HBTs; 4. SiGe HBT Circuit Tolerance.
    Content: 3. Summary and ConclusionsInvestigation of Single-Event Transients in Fast Integrated Circuits with a Pulsed Laser; 1. Basic Mechanisms of a SET; 2. SET Laser Testing; 3. Experimental set-up for SET laser testing; 4. Results; 5. Conclusions; System Level Single Event Upset Mitigation Strategies; 1. Introduction; 2. Systems Engineering for Energetic Particle Environment Compatibility; 3. Fault Tolerant Systems Strategies; Radiation-Tolerant Design for High Performance Mixed-Signal Circuits; 1. Introduction; 2. Radiation Mechanisms in Mixed-Signal Integrated Circuits.
    Content: 3. Process Component and Layout Choices for Hardened-by-Design Circuits4. Total Dose Hardening; 5. Single-Event Effect Hardening; 6. Dose-Rate Effect Hardening; 7. Conclusion; A Total-Dose Hardening-By-Design Approach for High-Speed Mixed-Signal CMOS Integrated Circuits; 1. Introduction; 2. Closed Geometry Transistors; 3. Circuit Application-Functional Description; 4. Performance of HBD APHY Circuit; 5. Conclusions; Radiation Issues in the New Generation of High Energy Physics Experiments; 1. Introduction; 2. The Radiation Environment; 3. SEU Rate Estimate in the LHC.
    Content: 4. Radiation-Hard ASICs Design5. Conclusions; Space Radiation Effects in Optocouplers; 1.0 Introduction; 2.0 Optocoupter Types Addressed in This Paper; 3.0 Physical Mechanisms of Particle-Induced Transient Effects; 4.0 Physical Mechanisms for Permanent Degradation; 5.0 Conclusions; Radiation Effects in Charge-Coupled Device (CCD) Imagers and CMOS Active Pixel Sensors; 1. Introduction; 2. Damage due to Total Ionizing Dose (TTD); 3. Displacement Damage; 4. Transient Events; 5. Future Work; The Effects of Space Radiation Exposure on Power MOSFETs: A Review; 1. Introduction.
    Content: Preface; CONTENTS; Single Event Effects in Avionics and on the Ground; 1. Introduction; 2. Similarities between SEE in Avionics and on the Ground; 3. Differences Between SEE in Avionics and on the Ground; 4. Atmospheric and Ground Level Environments; 5. SEE Data in devices; 6. Summary; Soft Errors in Commercial Integrated Circuits; 1. Introduction; 2. Scaling trends for memory devices; 3. Seating trend for peripheral logic devices; 4. Conclusion; Single-Event Effects in lll-V Semiconductor Electronics; 1. Introduction; 2. Single-Event Effects in lll-V Electronic Devices.
    Content: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623. - Includes bibliographical references. - Description based on print version record
    Additional Edition: 9789812389404
    Additional Edition: 9812389407
    Additional Edition: Erscheint auch als Druck-Ausgabe Radiation effects and soft errors in integrated circuits and electronic devices Singapore ; New Jersey : World Scientific Pub, ©2004
    Language: English
    Keywords: Electronic books
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  • 8
    Online Resource
    Online Resource
    Singapore [u.a.] : World Scientific Pub. | [Ann Arbor, Michigan] : [ProQuest]
    UID:
    (DE-603)380003309
    Format: viii, 339 p. , Ill.
    Series Statement: Selected topics in electronics and systems vol. 34
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623 , Includes bibliographical references
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 9
    UID:
    (DE-604)BV043146983
    Format: 1 Online-Ressource (viii, 339 p.)
    ISBN: 9789812389404 , 9789812794703 , 9812389407 , 9812794700
    Series Statement: Selected topics in electronics and systems vol. 34
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623 , Includes bibliographical references
    Language: English
    Library Location Call Number Volume/Issue/Year Availability
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  • 10
    UID:
    (DE-604)BV044635634
    Format: viii, 339 p. , ill
    ISBN: 9789812794703
    Series Statement: Selected topics in electronics and systems vol. 34
    Content: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal–oxide–semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level
    Note: Also published in the International Journal of High Speed Electronics and Systems, v. 14, no. 2 (2004) p. 285-623
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9789812389404
    Additional Edition: Erscheint auch als Druck-Ausgabe ISBN 9812389407
    Language: English
    URL: Volltext  (URL des Erstveroeffentlichers)
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