Format:
Online-Ressource
ISSN:
1610-1642
Content:
Abstract: A microstructure in an AlGaN/GaN layer was analyzed in detail by means of transmission electron microscopy (TEM) and scanning electron microscopy (SEM) with special attention to the formation of steps on the surface. The AlGaN layer was grown by MOVPE on a GaN template with periodic trenches. It was revealed that there formed were Al‐depleted bands in the AlGaN layer. These bands were generated from rather lower regions in the AlGaN layer or those above the trenches, and run upwards. Some of them reached the top surface to connect a macro step. The formation mechanism of the Al‐depleted region is discussed in terms of thermodynamics. If the total bonding energy of atoms on the macro step of surface is assumed to be smaller than that of atoms on a flat surface, the Al‐depletion can be explained provided that the local equilibrium in concentration is conserved during the growth of AlGaN layer. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
In:
volume:7
In:
number:7‐8
In:
year:2010
In:
pages:2036-2039
In:
extent:4
In:
Physica status solidi / C. C, Current topics in solid state physics, Berlin : Wiley-VCH, 2002-2017, 7, Heft 7‐8 (2010), 2036-2039 (gesamt 4), 1610-1642
Language:
English
DOI:
10.1002/pssc.200983424
URN:
urn:nbn:de:101:1-2023041206263412892819
URL:
https://doi.org/10.1002/pssc.200983424
URL:
https://nbn-resolving.org/urn:nbn:de:101:1-2023041206263412892819
URL:
https://d-nb.info/128596070X/34
URL:
https://doi.org/10.1002/pssc.200983424
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